* the content of both sessions is identical

What to expect?

Analytical electron microscopy (EM) techniques such as energy-dispersive X-ray spectroscopy (EDS) are invaluable for studying biological samples containing minerals like calcium carbonate (CaCO₃), metal ions, or other compositions beyond carbon and oxygen. However, analyzing beam-sensitive materials can be challenging due to their low signal output and long acquisition times, often leading to sample damage and loss of the measured area. The XFlash^® FlatQUAD detector was utilized to overcome these challenges, enabling the study of beam-sensitive organic materials, particularly frozen biological samples in scanning electron microscopy (SEM).

In this webinar, our guest speaker, Dr. Ifat Kaplan will present the cryo-SEM-EDS workflow, along with imaging and spectral data that reveal the distribution of metal ions during silk processing in silkworms. SEM EDS mapping under cryo-conditions reveals the composition and spatial localization of metal ions during silk evolution within the silk gland. These findings were recently published in *Nature Communications* (*O. Brookstein et al., 2024, DOI: 10.1038/s41467-024-50879-9*).

Join us for this informative 30-minute session to learn about the exceptional performance of the XFlash^® FlatQUAD, a highly sensitive EDS detector for SEM, which is optimial for chemical mapping of biological and life science specimens. Discover how this cutting-edge technology handles even the most challenging samples with unparalleled speed (10x–50x faster compared with conventional EDS detectors) and sensitivity, making it a top choice for SEM EDS analysts.

Who should attend?

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Chemical distribution map of a heavily charging pharmaceutical sample (multivitamin tablet) at 10 kV and low probe current (< 150 pA) with a short measurement time (67 seconds) and high count rate of 46,700 cps.

Ultra-high resolution SEM EDS map of a bulk FinFET structure acquired at 5 kV with XFlash® FlatQUAD with a high countrate of 309,000 cps in 90 seconds. The peak overlaps of Si-K (1.74 keV), W-M (1.81 keV) and Hf-M (1.67 keV) X-ray lines are automatically deconvoluted during acquisition.

Our Speakers

Dr. Ifat Kaplan-Ashiri Associate Staff Scientist Electron Microscopy Unit, Department of Chemical Research Support, Weizmann Institute of Science

Dr. Purvesh Soni Application Scientist EDS Bruker Nano Analytics